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LFXP Datasheet(PDF) 39 Page - Lattice Semiconductor |
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LFXP Datasheet(HTML) 39 Page - Lattice Semiconductor |
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39 / 130 page ![]() 3-8 DC and Switching Characteristics Lattice Semiconductor LatticeXP Family Data Sheet sysIO Single-Ended DC Electrical Characteristics Input/Output Standard VIL VIH VOL Max. (V) VOH Min. (V) IOL (mA) IOH (mA) Min. (V) Max. (V) Min. (V) Max. (V) LVCMOS 3.3 -0.3 0.8 2.0 3.6 0.4 VCCIO - 0.4 20, 16, 12, 8, 4 -20, -16, -12, -8, -4 0.2 VCCIO - 0.2 0.1 -0.1 LVTTL -0.3 0.8 2.0 3.6 0.4 VCCIO - 0.4 20, 16, 12, 8, 4 -20, -16, -12, -8, -4 0.2 VCCIO - 0.2 0.1 -0.1 LVCMOS 2.5 -0.3 0.7 1.7 3.6 0.4 VCCIO - 0.4 20, 16, 12, 8, 4 -20, -16, -12, -8, -4 0.2 VCCIO - 0.2 0.1 -0.1 LVCMOS 1.8 -0.3 0.35VCCIO 0.65VCCIO 3.6 0.4 VCCIO - 0.4 16, 12, 8, 4 -16, -12, -8, -4 0.2 VCCIO - 0.2 0.1 -0.1 LVCMOS 1.5 -0.3 0.35VCCIO 0.65VCCIO 3.6 0.4 VCCIO - 0.4 8, 4 -8, -4 0.2 VCCIO - 0.2 0.1 -0.1 LVCMOS 1.2 (“C” Version) -0.3 0.42 0.78 3.6 0.4 VCCIO - 0.4 6, 2 -6, -2 0.2 VCCIO - 0.2 0.1 -0.1 LVCMOS 1.2 (“E” Version) -0.3 0.35VCC 0.65VCC 3.6 0.4 VCCIO - 0.4 6, 2 -6, -2 0.2 VCCIO - 0.2 0.1 -0.1 PCI -0.3 0.3VCCIO 0.5VCCIO 3.6 0.1VCCIO 0.9VCCIO 1.5 -0.5 SSTL3 class I -0.3 VREF - 0.2 VREF + 0.2 3.6 0.7 VCCIO - 1.1 8 -8 SSTL3 class II -0.3 VREF - 0.2 VREF + 0.2 3.6 0.5 VCCIO - 0.9 16 -16 SSTL2 class I -0.3 VREF - 0.18 VREF + 0.18 3.6 0.54 VCCIO - 0.62 7.6 -7.6 SSTL2 class II -0.3 VREF - 0.18 VREF + 0.18 3.6 0.35 VCCIO - 0.43 15.2 -15.2 SSTL18 class I -0.3 VREF - 0.125 VREF + 0.125 3.6 0.4 VCCIO - 0.4 6.7 -6.7 HSTL15 class I -0.3 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCIO - 0.4 8 -8 HSTL15 class III -0.3 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCIO - 0.4 24 -8 HSTL18 class I -0.3 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCIO - 0.4 9.6 -9.6 HSTL18 class II -0.3 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCIO - 0.4 16 -16 HSTL18 class III -0.3 VREF - 0.1 VREF + 0.1 3.6 0.4 VCCIO - 0.4 24 -8 1. The average DC current drawn by I/Os between GND connections, or between the last GND in an I/O bank and the end of an I/O bank, as shown in the logic signal connections table shall not exceed n * 8mA. Where n is the number of I/Os between bank GND connections or between the last GND in a bank and the end of a bank. |
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