STS4C3F30L datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STS4C3F30L

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

n-ch

p-ch

IDSS

Zero gate voltage

drain current

(VGS = 0)

VDS = Max rating

VDS = Max rating,@125°C

n-ch

p-ch

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

n-ch

p-ch

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

n-ch

p-ch

1.6

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 2A

VGS = 10V, ID = 1.5A

VGS = 4.5V, ID = 2A

VGS = 4.5V, ID = 1.5A

n-ch

p-ch

n-ch

p-ch

0.044

0.145

0.051

0.160

0.055

0.165

0.065

0.20

Ω

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS >ID(on)xRDS(on)max,

ID=3.5A

VDS >ID(on)xRDS(on)max,

ID=2A

n-ch

p-ch

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

220

420

115

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

N-channel

VDD = 24V, ID = 5 A

VGS = 10V

P-channel

VDD =15V, ID = 3 A

VGS = 4.5V

(see Figure 24)

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

9.5

4.8

2.25

1.7

STS4C3F30L Datasheet(PDF) 4 Page - STMicroelectronics

STS4C3F30L Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL