PEMD2_PIMD2_PUMD2_7

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 07 — 24 September 2008

3 of 16

NXP Semiconductors

PEMD2; PIMD2; PUMD2

NPN/PNP resistor-equipped transistors; R1 = 22 k

Ω, R2 = 22 kΩ

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 5.

Marking codes

Type number

Marking code[1]

PEMD2

D4

PIMD2

M5

PUMD2

D*2

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

10

V

input voltage TR1

positive

-

+40

V

negative

-

−10

V

input voltage TR2

positive

-

+10

V

negative

-

−40

V

output current

-

100

mA

peak collector current

single pulse;

-

100

mA

total power dissipation

[1]

PEMD2 (SOT666)

[2] -

200

mW

PIMD2 (SOT457)

-

300

mW

PUMD2 (SOT363)

-

200

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C