PIMD2 datasheet(5/16 Pages) NXP

5 / 16 page

PEMD2_PIMD2_PUMD2_7

Product data sheet

Rev. 07 — 24 September 2008

5 of 16

NXP Semiconductors

PEMD2; PIMD2; PUMD2

NPN/PNP resistor-equipped transistors; R1 = 22 k

Ω, R2 = 22 kΩ

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB = 0 A

--1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

180

µA

hFE

DC current gain

VCE =5V; IC = 5 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input

voltage

VCE =5V; IC = 100 µA

1.1

0.8

VI(on)

on-state input

voltage

VCE = 0.3 V; IC = 5 mA

2.5

1.7

bias resistor 1 (input)

15.4

28.6

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance VCB =10V; IE =ie =0A;

f=1MHz

TR1 (NPN)

2.5

TR2 (PNP)

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