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SCS196K Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCS196K Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SCS196K 85 V, 300 mA Plastic-Encapsulated Diodes 01-June-2002 Rev. A Page 1 of 2 3 1 2 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View 1 2 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low forward voltage: VF(3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) PACKAGE DIMENSIONS MARKING: G3 ABSOLUTE MAXIMUM RATINGS at TA = 25°C Parameter Symbol Ratings Unit Non-Repetitive Peak Reverse Voltage VRM 85 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM 300 mA Average Rectified Output Currrent IO 100 mA Power Dissipation PD 150 mW Junction, Storage Temperature TJ, TSTG +125, -55 ~ +125 ℃ CHARACTERISTICS at TA = 25°C Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 80 - - V IR = 100 μA VF1 - 0.60 - V IF = 1mA VF2 - 0.72 - V IF = 10mA Forward Voltage VF3 - 0.90 1.2 V IF = 100mA IR1 - - 0.1 μA VR = 30V Reverse Current IR2 - - 0.5 μA VR = 80V Capacitance Between Terminals CT - 0.9 3.0 pF VR = 0, f = 1 MHz Reverse Recovery Time trr - 1.6 4.0 ns IF = IR = 10mA, Irr=0.1 × IR |
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