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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

SP8T AlGaAs PIN Diode Switch

Rev. V2

MA4AGSW8-2

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Absolute Maximum Ratings

1

1.Operation of this device above any one of these

parameters may cause permanent damage.

Parameter

Absolute Maximum

D.C. Reverse Voltage

25V

Operating Temperature

-55°C to +125°C

Storage Temperature

-65°C to +150°C

Bias Current

±30mA

Note

:

FEATURES

• Specified Performance : 50 MHz to 40 GHz

• Operational Performance: 50 MHz to 50 GHz

• 2.0 dB Typical Insertion Loss at 40 GHz

• 30 dB Typical Isolation at 40 GHz thru 3 Diodes

• 22 dB Typical Isolation at 40 GHz thru 2 Diodes

• Low Current Consumption

• 10 mA for low loss state

•

0 Volts for Isolation state

• M/A-COM’s Patented AlGaAs Hetero-Junction

Anode Technology.

• Silicon Nitride Passivation

• BCB Impact Protection

• RoHS Compliant

DESCRIPTION

M/A-COM’s MA4AGSW8-2 is an Aluminum-Gallium-

Arsenide (AlGaAs) anode enhanced, SP8T, PIN

diode series switch. Operation is accomplished with

10 mA applied to the low loss port and 0V for the

isolated ports. M/A-COM’s Technology Solutions

AlGaAs process utilizes a patented hetero-junction

technology which produces lower insertion loss than

conventional GaAs devices. These devices are

fabricated on an OMCVD epitaxial wafer using a

process designed for high device uniformity and

extremely low parasitics. The diodes used have low

series resistance, (3 Ω) , low capacitance (20 fF) , and

fast switching speed (20 nS). The MA4AGSW8-2

device is fully passivated with silicon nitride, and has

an extra layer of polyamide for added scratch and

impact protection. This protective coating prevents

damage to the diode junction and anode air bridges

during handling and assembly. External RF to DC

bias networks which are optimized for the particular

operating band of interest are required.

APPLICATIONS

The low capacitance of the internal PIN diodes makes

this switch ideal for use in many microwave

multi-throw switch designs. The low series resistance

of the diodes reduces the insertion loss at microwave

millimeter-wave frequencies. These AlGaAs PIN

switches can be used as switching arrays on radar

systems, optical switching networks, instrumentation,

and other wideband multi-throw switch assemblies.

CHIP LAYOUT