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ATtiny261A Datasheet(PDF) 172 Page - ATMEL Corporation |
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ATtiny261A Datasheet(HTML) 172 Page - ATMEL Corporation |
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172 / 292 page ![]() 172 8197A–AVR–10/09 ATtiny261A/461A/861A interface before the Flash write operation completes can result in incorrect programming. 5. A: The EEPROM array is programmed one byte at a time by supplying the address and data together with the appropriate Write instruction. An EEPROM memory location is first automatically erased before new data is written. If polling (RDY/BSY) is not used, the user must wait at least tWD_EEPROM before issuing the next byte. (See Table 18-10.) In a chip erased device, no 0xFFs in the data file(s) need to be programmed. B: The EEPROM array is programmed one page at a time. The Memory page is loaded one byte at a time by supplying the 2 LSB of the address and data together with the Load EEPROM Memory Page instruction. The EEPROM Memory Page is stored by loading the Write EEPROM Memory Page Instruction with the 6 MSB of the address. When using EEPROM page access only byte locations loaded with the Load EEPROM Memory Page instruction is altered. The remaining locations remain unchanged. If poll- ing (RDY/BSY) is not used, the used must wait at least tWD_EEPROM before issuing the next page (See Table 18-8). In a chip erased device, no 0xFF in the data file(s) need to be programmed. 6. Any memory location can be verified by using the Read instruction which returns the content at the selected address at serial output MISO. 7. At the end of the programming session, RESET can be set high to commence normal operation. 8. Power-off sequence (if needed): Set RESET to “1”. Turn VCC power off. 18.6.2 Serial Programming Instruction set The instruction set is described in Table 18-11 and Figure 18-2 on page 174. Table 18-10. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location Symbol Minimum Wait Delay tWD_FLASH 4.5 ms tWD_EEPROM 4.0 ms tWD_ERASE 4.0 ms tWD_FUSE 4.5 ms Table 18-11. Serial Programming Instruction Set Instruction/Operation Instruction Format Byte 1 Byte 2 Byte 3 Byte4 Programming Enable $AC $53 $00 $00 Chip Erase (Program Memory/EEPROM) $AC $80 $00 $00 Poll RDY/BSY $F0 $00 $00 data byte out Load Instructions Load Extended Address byte(1) $4D $00 Extended adr $00 Load Program Memory Page, High byte $48 adr MSB adr LSB high data byte in |
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