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APTM120U10SCAVG Datasheet(PDF) 8 Page - Microsemi Corporation

Part # APTM120U10SCAVG
Description  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SCAVG Datasheet(HTML) 8 Page - Microsemi Corporation

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APTM120U10SCAVG
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SiC Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.24
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
40
80
120
160
00.5
1
1.5
22.533.5
VF Forward Voltage (V)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
150
300
450
600
750
900
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
0
900
1800
2700
3600
4500
5400
6300
1
10
100
1000
VR Reverse Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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