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APTM120U10SCAVG Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTM120U10SCAVG
Description  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SCAVG Datasheet(HTML) 2 Page - Microsemi Corporation

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APTM120U10SCAVG
www.microsemi.com
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Absolute maximum ratings
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 1200V
Tj = 25°C
1
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
3
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 58A
100
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 20mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.9
Coss
Output Capacitance
4.4
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.8
nF
Qg
Total gate Charge
1100
Qgs
Gate – Source Charge
128
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 116A
716
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
17
Td(off)
Turn-off Delay Time
245
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2Ω
62
ns
Eon
Turn-on Switching Energy
3
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
4.6
mJ
Eon
Turn-on Switching Energy
5.5
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
5.6
mJ
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
116
ID
Continuous Drain Current
Tc = 80°C
86
IDM
Pulsed Drain current
464
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
120
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
3290
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ



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