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APTM120U10SCAVG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTM120U10SCAVG
Description  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SCAVG Datasheet(HTML) 1 Page - Microsemi Corporation

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APTM120U10SCAVG
www.microsemi.com
1 – 8
D
DK
S
SK
G
G, SK and DK terminals are for control signals only
(not for power)
D
S
DK
SK
SK
G
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
SiC Parallel Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Kelvin drain for voltage monitoring
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
-
M3 power connectors
High level of integration
AlN substrate for improved MOSFET thermal
performance
Benefits
Outstanding
performance
at
high
frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Single switch
Series & SiC parallel diodes
MOSFET Power Module


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