SSM4816SM datasheet(2/9 Pages) SSC

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SSM4816SM

Rev.1.01 4/16/2004

MOSFET-1 Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

0.03

V/ °C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=6A

Ω

VGS=4.5V, ID=5A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=6A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=30V, VGS=0V

Drain-Source Leakage Current (Tj=70

oC)

VDS=24V, VGS=0V

IGSS

Gate-Source Leakage

VGS=±20V

±100

Total Gate Charge

ID=6A

Qgs

Gate-Source Charge

VDS=24V

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

td(on)

Turn-on Delay Time

VDS=15V

Rise Time

ID=1A

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=10V

Fall Time

RD=15

Ω

Ciss

Input Capacitance

VGS=0V

780

1250

Coss

Output Capacitance

VDS=25V

180

Crss

Reverse Transfer Capacitance

f=1.0MHz

Gate Resistance

f=1.0MHz

1.25

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=1.2A, VGS=0V

1.2

trr

Reverse Recovery Time

IS=6A, VGS=0V

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

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