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SSM4816SM

Rev.1.01 4/16/2004

DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE

Simple drive requirement

MOSFET

30V

Suitable for DC-DC Converters

22m

Ω

Fast switching performance

6.7A

30V

13m

Ω

Description

11.5A

Absolute Maximum Ratings

Symbol

Rating

Units

MOSFET-2

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

3

11.5

A

Continuous Drain Current

3

9.2

A

Pulsed Drain Current

1

40

A

Total Power Dissipation

2.4

W

Linear Derating Factor

0.02

W/°C

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Symbol

Units

Max.

Thermal Resistance Junction-ambient

3

90

°C/W

Thermal Resistance Junction-ambient

3

53

°C/W

Thermal Resistance Junction-ambient

3

60

°C/W

1.4

0.01

42

52

Value

Thermal Data

Typ.

70

Parameter

Parameter

6.7

5.3

30

30

±20

MOSFET-1

Advanced Power MOSFETs from Silicon Standard provide

the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is widely preferred for commercial and

industrial surface mount applications and is well suited for

low voltage applications such as DC/DC converters.

G1

S2/A

S2/A

G2

D1

S1/D2

S1/D2

S1/D2

SO-8

G1

D1

S1/D2

G2

N-channel

MOSFET 1

S2/A

N-channel

MOSFET 2

Schottky Diode