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SSM4816SM Datasheet(PDF) 3 Page - Silicon Standard Corp.

Part # SSM4816SM
Description  DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE
PDF  9 Pages
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Manufacturer  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4816SM Datasheet(HTML) 3 Page - Silicon Standard Corp.

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SSM4816SM
Rev.1.01 4/16/2004
MOSFET-2 Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C,ID=1mA
-
0.03
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=11A
-
-
13
m
Ω
VGS=4.5V, ID=8A
-
-
18.5
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=11A
-
15
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
-
100
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
-
1
mA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=8A
-
20
30
nC
Qgs
Gate-Source Charge
VDS=24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
12
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
31
-
ns
tf
Fall Time
RD=15Ω
-12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=1A, VGS=0V
-
-
0.5
V
trr
Reverse Recovery Time
2
IS=8A, VGS=0V
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10 sec.



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