PSMN014-40YS_1

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Objective data sheet

Rev. 01 — 18 February 2010

6 of 15

NXP Semiconductors

PSMN014-40YS

N-channel LFPAK 40 V, 14 m

Ω standard level MOSFET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

36

-

-

V

40

-

-

V

gate-source threshold

voltage

--

4.6

V

see Figure 10

1-

-

V

and 10

23

4V

drain leakage current

-

0.02

2

µA

-

-

50

µA

gate leakage current

-

-

100

nA

-

-

100

nA

drain-source on-state

resistance

see Figure 12

--

20

m

Ω

see Figure 12

-20

27

m

Ω

see Figure 13

-11

14

m

Ω

internal gate resistance

(AC)

f=1MHz

-

0.6

-

Ω

Dynamic characteristics

total gate charge

-

10

-

nC

see Figure 14 and 15

-12

-

nC

gate-source charge

-

5.4

-

nC

pre-threshold

gate-source charge

see Figure 14

-2.2

-nC

post-threshold

gate-source charge

-3.2

-nC

gate-drain charge

see Figure 14 and 15

-2.4

-nC

gate-source plateau

voltage

-6

-V

input capacitance

see Figure 16

-

702

-

pF

output capacitance

-

171

-

pF

reverse transfer

capacitance

-97

-

pF

turn-on delay time

-12

-

ns

rise time

-6

-ns

turn-off delay time

-

19

-

ns

fall time

-5

-ns