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TPCF8402 Datasheet(PDF) 7 Page - Toshiba Semiconductor |
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TPCF8402 Datasheet(HTML) 7 Page - Toshiba Semiconductor |
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7 / 11 page ![]() TPCF8402 2009-12-10 7 P-channel rth – tw Pulse width tw (s) Drain-source voltage VDS (V) Safe operating area 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) Single pulse -10 -0.1 -100 -10 -1 -100 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. ID max (pulsed) * 10 ms * 1 ms * VDSS max -1 -0.1 |
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