BUJ105AD datasheet(6/12 Pages) NXP

6 / 12 page

9397 750 14196

Product data sheet

Rev. 01 — 14 December 2004

6 of 12

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

Fig 9.

DC current gain as a function of collector

current; typical values at VCE = 1 V

Fig 10. DC current gain as a function of collector

current; typical values at VCE = 5 V

Tj = 25 °C.

IC/IB = 4.

Fig 11. Collector-emitter saturation voltage as a

function of base current; typical values

Fig 12. Base-emitter saturation voltage as a function of

collector current; typical values

001aac045

IC (A)

10−2

10−1

102

hFE

Tj = 100 °C

°C

−40 °C

001aac046

IC (A)

10−2

10−1

102

hFE

Tj = 100 °C

°C

−40 °C

IB (A)

10−2

10−1

001aab995

0.8

1.2

0.4

1.6

2.0

VCEsat

(V)

IC = 1 A

2 A 3 A

4 A

IC (A)

10−1

001aac047

0.9

0.7

1.1

1.3

VBEsat

(V)

0.5

Tj = −40 °C

°C

100

°C

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