BUJ103AD datasheet(4/12 Pages) NXP

4 / 12 page

9397 750 14195

Product data sheet

Rev. 01 — 14 December 2004

4 of 12

Philips Semiconductors

BUJ103AD

Silicon diffused power transistor

[1]

Measured with half sine-wave voltage (curve tracer).

hFEsat

DC saturation current gain

IC = 2.0 A; VCE = 5 V

IC = 3.0 A; VCE = 5 V

12.5

Dynamic characteristics

Switching times (resistive load); see Figure 5 and 6

ton

turn-on time

ICon = 2.5 A; IBon = −IBoff = 0.5 A;

RL =75 Ω

0.52

0.6

µs

tstg

storage time

2.7

3.3

µs

fall time

0.3

0.35

µs

Switching times (inductive load); see Figure 7 and 8

tstg

storage time

ICon = 2 A; IBon = 0.4 A; LB = 1 µH;

VBB = −5V

1.2

1.4

µs

fall time

Switching times (inductive load); see Figure 7 and 8

tstg

storage time

ICon = 2 A; IBon = 0.4 A; LB = 1 µH;

VBB = −5 V; Tj = 100 °C

1.8

µs

fall time

120

Table 5:

Characteristics …continued

Tmb = 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 3.

Test circuit for collector-emitter sustaining

voltage

Fig 4.

Oscilloscope display for collector-emitter

sustaining voltage test waveform

001aab987

horizontal

Ω

300

Ω

6 V

vertical

oscilloscope

50 V

100

Ω to 200 Ω

30 Hz to 60 Hz

001aab988

VCE (V)

min

VCEOsus

(mA)

100

250

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