BUJ103AD datasheet(5/12 Pages) NXP

Part #	BUJ103AD

Description	Silicon diffused power transistor

PDF	12 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

9397 750 14195

Product data sheet

Rev. 01 — 14 December 2004

5 of 12

Philips Semiconductors

BUJ103AD

Silicon diffused power transistor

VIM = −6 V to +8 V; VCC = 250 V; tp =20 µs;

δ =tp/T = 0.01.

RB and RL calculated from ICon and IBon

requirements.

Fig 5.

Test circuit for resistive load switching

Fig 6.

Switching times waveforms for resistive load

VCC = 300 V; VBB = −5 V; LC = 200 µH; LB = 1 µH.

Fig 7.

Test circuit for inductive load switching

Fig 8.

Switching times waveforms for inductive load

001aab989

VIM

DUT

VCC

001aab990

10 %

90 %

ton

toff

tstg

IBon

−IBoff

ICon

tr ≤ 30 ns

001aab991

VCC

DUT

IBon

VBB

001aab992

90 %

toff

IBon

tstg

−IBoff

ICon

10 %

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