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LT3748 Datasheet(PDF) 21 Page - Linear Technology |
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LT3748 Datasheet(HTML) 21 Page - Linear Technology |
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21 / 30 page ![]() LT3748 21 3748fa LPRI≤VIN(MIN)•(VOUT+VF(DIODE))•NPS/(fSW(MIN)•ILIM• ((VOUT + VF(DIODE)) • NPS + VIN(MIN))) LPRI ≥ (VOUT + VF(DIODE)) • RSENSE • 400ns • NPS/15mV LPRI ≥ VIN(MAX) • RSENSE • 200ns/15mV For this application, the primary inductance with a 2:1 transformer and a 0.016Ω sense resistor for an 6.25A current limit is bounded by the minimum desired switch- ing frequency and the minimum off time requirement to be between 9.6μH and 11.5μH. Looking at Table 1, there are no transformers that fit that exact requirement. For the sake of prototyping, a transformer with slightly less than the desired primary inductance is selected with the PA3177NL. The application will need to be tested thoroughly for sta- bility at higher input voltages and when the current limit is at a minimum (in the middle of the output load range). The easiest solution to ease the requirement on minimum on-time is to reduce the maximum VIN voltage although alternatively NPS could be increased at the expense of ef- ficiency (and requiring a more thorough redesign). 4. Select a MOSFET Switch The selected 2:1 transformer requires a nominal 55V rating on the MOSFET switch, assuming no leakage inductance. However, even a small amount of leakage inductance may cause the drain to ring to double the anticipated voltage, and generally this needs to be verified in the final design. However, at currents below 10A it is fairly easy to find a MOSFET with sufficiently low RDS(ON) to be a very small contributor to maximum load efficiency losses while similarly having a low enough QG to require minimum current and minimal losses when driving the MOSFET at lighter loads. Also, while considering the efficiency gains and losses with a given MOSFET, it is important to real- ize that a trade-off in RDS(ON) for VDS(MAX) may backfire if a snubber needs to be added to the circuit to meet the voltage requirements and dissipates more energy than the difference in switch resistance. For that reason, a Vishay Si7738 is selected to give lots of margin with its 150V rating. The RMS current in the MOSFET can be calculated, squared and multiplied by the RDS(ON) to calculate losses and the current required to drive the FET at frequency can be determined, by the following equations: IMOSFET(RMS) = √ILIM2 • D/3 IINTVCC = fSW • QG PINTVCC = IINTVCC • (VIN – VINTVCC) In this application the MOSFET RMS current at maximum load is about 2.7A, which into the 0.038Ω RDS(ON) will be 0.28W, or on the order of 2% loss in efficiency. Assuming that the maximum operating frequency is around four times higher than the maximum load frequency (at about a quarter the output load) and reading the approximate QG at 7V operation from the Vishay data sheet, the approximate INTVCC current is likely close to 8mA, dissipating 0.04W when the load is on the order of 2.5W, or less than 2%, and much less at maximum load. 5. Select the Output Diode The output diode reverse voltage, as calculated earlier, is the first important specification for the output diode. As with the MOSFET, choosing a diode with enough margin should preclude the use of a snubber. The second criterion is the power requirement of the diode which is more difficult to correctly ascertain—some manufacturers give direct data about power dissipation versus duty cycle, which can be used with the data from the table to determine. To avoid using a snubber, a diode with a 60V reverse-bias capabil- ity and minimal forward drop was selected—in this case, the Diodes Inc. SBR 8U60P5. In this particular application where maximizing efficiency is the goal, minimizing the maximum voltage requirement on VIN may allow the use of a diode with a lower reverse bias rating and a lower forward drop which could further increase efficiency. Al- ternatively, if no efficient diode is available for a particular reverse bias rating, it may be more beneficial to increase the windings ratio until a diode with low forward drop can be selected and then reevaluate whether that solution with higher RMS diode current is beneficial. APPLICATIONS INFORMATION |
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