STM32F101V8 datasheet(33/85 Pages) STMICROELECTRONICS

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STM32F101x8, STM32F101xB

Electrical characteristics

Doc ID 13586 Rev 13

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5.3.2

Operating conditions at power-up / power-down

Subject to general operating conditions for TA.

Table 9.

Operating conditions at power-up / power-down

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 10 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 8.

Power dissipation at TA =

85 °C(3)

LQFP100

434

LQFP64

444

LQFP48

363

VFQFPN36

1110

Ambient temperature

Maximum power dissipation

–40

°C

Low power dissipation(4)

–40

105

°C

Junction temperature range

–40

105

°C

When the ADC is used, refer to Table 41: ADC characteristics.

It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV

between VDD and VDDA can be tolerated during power-up and operation.

If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal

characteristics on page 76).

In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see

Table 6.2: Thermal characteristics on page 76).

Table 8.

General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate



µs/V

VDD fall time rate



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