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MPXV4006DP Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

Part # MPXV4006DP
Description  Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
PDF  22 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPXV4006DP Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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MPXV4006
Sensors
Freescale Semiconductor
5
Pressure
On-Chip Temperature Compensation and Calibration
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 2 illustrates the Differential or Gauge configuration
in the basic chip carrier (Case 482). A gel die coat isolates the
die surface and wire bonds from the environment, while
allowing the pressure signal to be transmitted to the silicon
diaphragm.
The MPXV4006/MPVZ4006 series sensor operating
characteristics are based on use of dry air as pressure media.
Media, other than dry air, may have adverse effects on sensor
performance and long-term reliability. Internal reliability and
qualification test for dry air, and other media, are available
from the factory. Contact the factory for information regarding
media tolerance in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4 and Figure 5 shows the sensor output signal
relative to pressure input. Typical, minimum and maximum
output curves are shown for operation over a temperature
range of 10
°C to 60°C using the decoupling circuit shown in
Figure 3. The output will saturate outside of the specified
pressure range.
Figure 2. Cross Sectional Diagram SOP
(not to scale)
Figure 3. Recommended Power Supply Decoupling
and Output Filtering Recommendations
(For additional output filtering, please refer to
Application Note AN1646.)
Figure 4. Output versus Pressure Differential
at ±5.0% VFSS (without auto zero, Note 5 in
Operating Characteristics)
Figure 5. Output versus Pressure Differential
at ±2.46% VFSS (with auto zero, Note 5 in
Operating Characteristics)
Fluorosilicone
Gel Die Coat
Wire
Bond
Differential Sensing
Element
Thermoplastic
Case
Stainless
Steel Cap
Lead
Frame
P1
P2
Die Bond
Die
1.0 μF
IPS
470 pF
OUTPUT
Vs
+5 V
0.01 μFGND
Vout
Differential Pressure (kPa)
4.0
3.0
2.0
1.0
0
02.0
4.5
4.0
6.0
5.0
3.5
2.5
1.5
0.5
VS = 5.0 Vdc
TEMP = 10 to 60°C
Transfer Function (kPa):
Vout = VS*[(0.1533*P) + 0.053] ± 5.0% VFSS
Differential Pressure (kPa)
4.0
3.0
2.0
1.0
0
02.0
4.5
4.0
6.0
MAX
MIN
5.0
3.5
2.5
1.5
0.5
VS = 5.0 Vdc
TEMP = 10 to 60°C
TYPICAL
Transfer Function (kPa):
Vout = VS*[(0.1533*P) + 0.053] ± 2.46% VFSS
MAX
MIN
TYPICAL



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