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MMDT5451 Datasheet(PDF) 2 Page - Diodes Incorporated |
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MMDT5451 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  DS30171 Rev. 9 - 2 2 of 5 www.diodes.com MMDT5451 © Diodes Incorporated Electrical Characteristics, NPN 5551 Section @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO 180 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICBO ⎯ 50 nA μA VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 4.0V, IC = 0 ON CHARACTERISTICS (Note 6) DC Current Gain hFE 80 80 30 ⎯ 250 ⎯ ⎯ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 50 250 ⎯ VCE = 10V, IC = 1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 10mA, f = 100MHz Noise Figure NF ⎯ 8.0 dB VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz Electrical Characteristics, PNP 5401 Section @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V(BR)CBO -160 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICBO ⎯ -50 nA μA VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0 ON CHARACTERISTICS (Note 6) DC Current Gain hFE 50 60 50 ⎯ 240 ⎯ ⎯ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ⎯ VCE = -10V, IC = -1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -10mA, f = 100MHz Noise Figure NF ⎯ 8.0 dB VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz Notes: 6. Short duration pulse test used to minimize self-heating effect. |
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