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DMC3032LSD Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMC3032LSD
Description  COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3032LSD Datasheet(HTML) 2 Page - Diodes Incorporated

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DMC3032LSD
Document number: DS32153 Rev. 1 - 2
2 of 8
www.diodes.com
May 2010
© Diodes Incorporated
DMC3032LSD
Electrical Characteristics N-CHANNEL – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = 25°C
IDSS
-
-
1.0
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
1
1.45
2.1
V
VDS = VGS, IC = 250μA
Static Drain-Source On-Resistance
RDS (ON)
-
23
32
mΩ
VGS = 10V, IC = 7A
32
46
VGS = 4.5V, IC = 5.6A
Forward Transfer Admittance
|Yfs|
-
7.6
-
S
VDS = 5V, IC = 7A
Diode Forward Voltage (Note 5)
VSD
-
0.7
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Ciss
-
404.5
-
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
51.8
-
pF
Reverse Transfer Capacitance
Crss
-
45.1
-
pF
Gate Resistance
Rg
-
1.5
-
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (10V)
Qg
-
9.2
-
nC
VGS = 10V, VDS = 15V,
ID = 5.8A
Gate-Source Charge
Qgs
-
1.2
-
nC
Gate-Drain Charge
Qgd
-
1.8
-
nC
Turn-On Delay Time
tD(on)
-
3.4
-
ns
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 2.6Ω
Turn-On Rise Time
tr
-
6.18
-
ns
Turn-Off Delay Time
tD(off)
-
13.92
-
ns
Turn-Off Fall Time
tf
-
2.84
-
ns
0
4
8
12
16
20
01
2
3
4
5
Fig. 1 Typical Output Characteristics
V
, DRAIN-SOURCE VOLTAGE (V)
DS
V
= 2.0V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 8.0V
GS
0
4
8
12
16
20
01
2
3
4
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
V
= 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A



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