DMC3032LSD

Document number: DS32153 Rev. 1 - 2

4 of 8

www.diodes.com

May 2010

© Diodes Incorporated

DMC3032LSD

0

5

10

15

20

25

30

Fig. 9 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

10

100

1,000

f = 1MHz

C

rss

0

5

10

15

20

25

30

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-1

-1.7

-2.2

V

Static Drain-Source On-Resistance

-

30

39

mΩ

42

53

Forward Transfer Admittance

-

7

-

S

Diode Forward Voltage (Note 5)

-

-0.75

-1.0

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

1002

-

pF

f = 1.0MHz

Output Capacitance

-

125

-

pF

Reverse Transfer Capacitance

-

118

-

pF

Gate Resistance

-

13

-

Ω

Total Gate Charge (4.5V)

-

10.1

-

nC

Total Gate Charge (10V)

-

21.1

-

nC

Gate-Source Charge

-

2.8

-

nC

Gate-Drain Charge

-

3.2

-

nC

Turn-On Delay Time

-

10.1

-

ns

Turn-On Rise Time

-

6.5

-

ns

Turn-Off Delay Time

-

50.1

-

ns

Turn-Off Fall Time

-

22.2

-

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.