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SMS0610 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SMS0610
Description  P-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMS0610 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  SMS0610 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH SMS0610 Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Drain-Source Diode Forward Current
Operating Junction and Storage Temperature Range
Parameter
Symbol
Ratings
Unit
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient
A
V
V
mA
mA
/W
C
C
mW
VDS
VGS
ID@TJ =125
IDM
PD@TA=25
Tj, Tstg
Rthj-a
-60
±20
-250
-185
360
-1
-55~+150
350
o
o
C
o
C
o
1
2
1
1
IS
Thermal Data
Features
* Rugged And Reliable
* SOT-23 Package
* Super High Dense Cell Design
For Low RDS(ON)
RoHS Compliant Product
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
S
G
D
B
L
A
1
3
2
Top View
H
C
J
K
Gate
Source
Drain
D
G
S
01-Jun-2002 Rev. A
Page 1 of
5
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
SOT-23
SMS0610
-0.185A, -60V,RDS(ON) 7.5
P-Channel Enhancement Mode Power Mos.FET
Ω


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