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SMS0610 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS0610 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 5 page ![]() Elektronische Bauelemente Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Drain-Source Diode Forward Current Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient A V V mA mA /W C C mW VDS VGS ID@TJ =125 IDM PD@TA=25 Tj, Tstg Rthj-a -60 ±20 -250 -185 360 -1 -55~+150 350 o o C o C o 1 2 1 1 IS Thermal Data Features * Rugged And Reliable * SOT-23 Package * Super High Dense Cell Design For Low RDS(ON) RoHS Compliant Product http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A 1 3 2 Top View H C J K Gate Source Drain D G S 01-Jun-2002 Rev. A Page 1 of 5 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 SMS0610 -0.185A, -60V,RDS(ON) 7.5 P-Channel Enhancement Mode Power Mos.FET Ω |
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