SMS0610 datasheet(3/5 Pages) SECOS

3 / 5 page

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page

3 of 5

Characteristics Curve

Elektronische Bauelemente

SMS0610

-0.185A, -60V,RDS(ON) 7.5

P-Channel Enhancement Mode Power Mos.FET

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

-VGS, Gate-to-Source Voltage (V)

Figure 2. Thansfer Characteristics

1.5

2.5

3.5

4.5

Figure 6. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.8

Figure 5. On-Resistance Variation

with Gate-to-Source Voltage.

-50 -25

100 125 150

Figure 4. On-Resistance Variation

with Temperature

VGS = -10V

-3.0V

-4.0V

-3.5V

-4.5V

-2.0V

-6.0V

1.0

0.8

0.6

0.4

0.2

0.0

1.2

1.4

-55 C

25 C

TA = 125 C

VDS = -10V

1.0

0.8

0.6

0.4

0.2

0.0

1.2

Ciss

Coss

100

Crss

, Junction Temperature ( C)

VGS = -10V

ID = -0.5A

-VGS, Gate-to-Source Voltage (V)

ID = -0.25A

TA = 125 C

TA = 25 C

VGS = -3.0V

-3.5V

-4.0V

-4.5V

-5.0V

-5.5V

-ID, Drain Current (A)

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

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