SMS0610 datasheet(4/5 Pages) SECOS

Part #	SMS0610

Description	P-Channel Enhancement Mode Power Mos.FET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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4 / 5 page

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page

4 of 5

Elektronische Bauelemente

SMS0610

-0.185A, -60V,RDS(ON) 7.5

P-Channel Enhancement Mode Power Mos.FET

t1, Time (sec)

0.01

0.1

100

Figure 7. Single Pulse Maximum

Power Dissipation

60 100

0.1

0.01

-VSD

, Body Diode Forward Voltage (V)

Figure 8. Body Diode Forward Voltage

Variation with Source Current

0.2

0.4

0.6

0.8

1.0

1.2

Figure 9. Gate Charge

, Total Gate Charge (nC)

0.4

0.8

1.2

1.6

2.0

0.001

-VDS

, Drain-to-Source Voltage (V)

Figure 10. Maximum Safe

Operating Area

Single Pulse

RθJA = 350 C/W

TA = 25 C

VGS = 0V

TA = 125 C

25 C

-55 C

100

ID = -0.5A

VDS = -12V

-48V

-24V

VGS = 10V

Single Pulse

TA = 25 C

RDS(ON)

Limit

10ms

100ms

10s

1ms

100us

0.0001

0.001

0.01

0.1

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