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TJ2997GD Datasheet(PDF) 3 Page - HTC Korea TAEJIN Technology Co.

Part # TJ2997GD
Description  DDR Termination Regulator
PDF  13 Pages
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Manufacturer  HTC [HTC Korea TAEJIN Technology Co.]
Direct Link  http://www.htckorea.co.kr
Logo HTC - HTC Korea TAEJIN Technology Co.

TJ2997GD Datasheet(HTML) 3 Page - HTC Korea TAEJIN Technology Co.

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DDR Termination Regulator
TJ2997
Apr, 2011 - R1.0.1
3/13
HTC
ELECTRICAL CHARACTERISTICS (1)
Specifications with standard typeface are for TJ = 25˚. Unless otherwise specified, AVIN = 2.5V, PVIN = VDDQ = 1.8V
(1), (2), (3) for
DDRⅡ. AVIN = 2.5V, PVIN = VDDQ = 1.5V
(1), (2), (3) for DDRⅢ.
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VREF Voltage
VREF
VDDQ = 1.8V
0.882
0.90
0.918
V
VREF Voltage
VREF
VDDQ = 1.5V
0.735
0.75
0.765
V
VTT Output Voltage
VTT
IOUT = 0 A
VDDQ = 1.8V, PVIN = 1.8V
IOUT = ± 0.9 A
(6)
VDDQ = 1.8V, PVIN = 1.8V
0.86
0.86
0.90
0.90
0.94
0.94
V
VTT Output Voltage
VTT
IOUT = 0 A
@ VDDQ = 1.5V, PVIN = 1.5V
IOUT = ± 0.5 A
(6)
@ VDDQ = 1.5V, PVIN = 1.5V
IOUT = ± 0.9A
(6)
@ VDDQ = 1.5V, PVIN = 1.8V
0.71
0.71
0.71
0.75
0.75
0.75
0.79
0.79
0.79
V
VTT Output Voltage Offset
VOSVTT
IOUT = 0 A
IOUT = ± 0.5 A
(6)
IOUT = ± 0.9 A
(6) (if applicable)
-25
-25
-25
0
0
0
25
25
25
mV
Quiescent Current
(4)
IQ
IOUT = 0A
-
250
500
uA
VDDQ Input Impedance
ZVDDQ
-
100
-
kΩ
Quiescent Current in Shutdown
(4)
ISD
EN = 0V
150
300
uA
Shutdown Leakage Current
IQ_SD
EN = 0V
0.1
0.5
uA
Minimum Enable High Level
VIH
1.9
(7)
-
-
V
Maximum Enable Low Level
VIL
-
-
0.6
V
VTT Leakage Current in Shutdown
IV
EN= 0V, VTT = 1.25V
1
10
uA
VSENSE Input Current
ISENSE
-
-
0.1
uA
Thermal Shutdown
(5)
TSD
-
165
-
℃
Note 1. Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating range indicates conditions
for which the device is intended to be functional, but does not guarantee specific performance limits. For guaranteed
specifications and test conditions see Electrical Characteristics. The guaranteed specifications apply only for the test conditions
listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2. At elevated temperatures, devices must be derated based on thermal resistance. The device in the SOP8 package must be
derated at θJA = 165˚ C/W junction to ambient with no heat sink.
Note 3. Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation.
Note 4. Quiescent current defined as the current flow into AVIN.
Note 5. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction to ambient
thermal resistance, θJA, and the ambient temperature, TA. Exceeding the maximum allowable power dissipation will cause
excessive die temperature and the regulator will go into thermal shutdown.
Note 6. VTT load regulation is tested by using a 10 ms current pulse and measuring VTT.
Note 7. In the case of AVIN > 2.5V, minimum enable high level is AVIN * 0.7.



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