SIE820DF datasheet(3/10 Pages) VISHAY

3 / 10 page

Document Number: 74447

S09-1338-Rev. B, 13-Jul-09

www.vishay.com

Vishay Siliconix

SiE820DF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.5

1.0

1.5

2.0

VGS = 5 V thru 2.5 V

VDS - Drain-to-Source Voltage (V)

VGS = 2 V

020

VGS = 4.5 V

ID - Drain Current (A)

VGS = 2.5 V

0.003

0.004

0.005

0.006

0.007

0.008

0.002

204060

100

ID = 20 A

Qg - Total Gate Charge (nC)

VDS = 16 V

VDS = 10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1.0

1.4

1.8

2.2

2.6

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

1200

2400

3600

4800

6000

7200

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

VGS = 4.5 V

TJ - Junction Temperature (°C)

ID = 18 A

VGS = 2.5 V

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