SIE820DF datasheet(4/10 Pages) VISHAY

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Document Number: 74447

S09-1338-Rev. B, 13-Jul-09

Vishay Siliconix

SiE820DF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VSD - Source-to-Drain Voltage (V)

100

TJ = 25 °C

TJ = 150 °C

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

012345

ID = 18 A

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

0.004

0.003

0.002

0.005

0.006

0.007

0.008

Time (s)

1000

0.1

0.01

100

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

1 ms

10 ms

100 ms

1 s

10 s

0.1

TA = 25 °C

Single Pulse

Limited by RDS(on)*

BVDSS

Limited

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