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SIE862DF Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIE862DF Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 10 page  Vishay Siliconix SiE862DF Document Number: 65026 S09-1395-Rev. A, 20-Jul-09 www.vishay.com 1 New Product N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size ≤ 100 V • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC APPLICATIONS •VRM • DC/DC Conversion • Synchronous Rectification • POL PRODUCT SUMMARY VDS (V) RDS(on) (Ω) e ID (A) a Qg (Typ.) Silicon Limit Package Limit 30 0.0032 at VGS = 10 V 134 50 23 nC 0.0041 at VGS = 4.5 V 119 50 Package Drawing www.vishay.com/doc?68797 Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 PolarPAK 10 D S S G D D S S G D 1 43 2 5 67 8 9 D DS G D 5 4 3 2 1 6 7 8 9 10 Ordering Information: SiE862DF-T1-GE3 (Lead (Pb)-free and Halogen-free) For Related Documents www.vishay.com/ppg?65026 N-Channel MOSFET G D S Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile ( www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 134 (Silicon Limit) A 50a (Package Limit) TC = 70 °C 50a TA = 25 °C 30b, c TA = 70 °C 24b, c Pulsed Drain Current IDM 100 Continuous Source-Drain Diode Current TC = 25 °C IS 50a TA = 25 °C 4.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 40 Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66 TA = 25 °C 5.2b, c TA = 70 °C 3.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 |
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