CSD25302Q2 datasheet(5/9 Pages) TI

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TC − Case Temperature − °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

−75

−25

125

175

G007

ID = −3A

VGS = −4.5V

0.0

0.2

0.4

0.6

0.8

1.0

−VSD − Source to Drain Voltage − V

G008

TC = 25°C

0.01

0.0001

0.001

0.1

TC = 125°C

−VD − Drain Voltage − V

G009

0.01

0.1

100

1ms

10ms

Single Pulse

Typical RθJA = 166°C/W (min Cu)

Area Limited

by RDS(on)

100

0.01

0.1

100ms

TC − Case Temperature − °C

−50

−25

100

125

150

175

G011

CSD25302Q2

www.ti.com

SLPS234A – NOVEMBER 2009 – REVISED OCTOBER 2010

TYPICAL MOSFET CHARACTERISTICS (continued)

TA = 25°C, unless otherwise specified

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

Figure 10. Maximum Safe Operating Area

Figure 11. Maximum Drain Current vs. Temperature

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