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CSD25302Q2 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD25302Q2 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 9 page  1 S 2 S S 3 S 4 S 5 G 6 D D P0112-01 Qg − GateCharge − nC 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 G003 ID = −3A VDS = −10V −VGS − Gate to Source Voltage − V 0 25 50 75 100 125 150 1 2 3 4 5 6 7 8 G006 ID = −3A TC = 125°C TC = 25°C CSD25302Q2 www.ti.com SLPS234A – NOVEMBER 2009 – REVISED OCTOBER 2010 P-Channel NexFET™ Power MOSFET 1 FEATURES PRODUCT SUMMARY • Ultralow Qg and Qgd VDS Drain to Source Voltage –20 V • Low Thermal Resistance Qg Gate Charge Total (–4.5V) 2.6 nC • Avalanche Rated Qgd Gate Charge Gate to Drain 0.5 nC • Pb Free Terminal Plating VGS = –1.8V 71 m Ω RDS(on) Drain to Source On Resistance VGS = –2.5V 56 m Ω • RoHS Compliant VGS = –4.5V 39 m Ω • Halogen Free VGS(th) Threshold Voltage –0.65 V • SON 2-mm × 2-mm Plastic Package ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • Battery Management SON 2-mm × 2-mm 13-Inch Tape and CSD25302Q2 3000 • Load Management Plastic Package Reel Reel • Battery Protection ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage –20 V The device has been designed to deliver the lowest VGS Gate to Source Voltage ±8 V on resistance and gate charge in the smallest outline Continuous Drain Current, TC = 25°C –5 A possible with excellent thermal characteristics in an ID ultra low profile. Low on resistance coupled with the Continuous Drain Current(1) –5 A extremely small footprint and low profile make the IDM Pulsed Drain Current, TA = 25°C (2) –20 A device ideal for battery operated space constrained PD Power Dissipation 2.4 W applications. TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Top View (1) Package Limited (2) Pulse duration 10 µs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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