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RJM0404JSC Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJM0404JSC
Description  Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
PDF  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJM0404JSC Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJM0404JSC
Preliminary
R07DS0338EJ0500 Rev.5.00
Page 4 of 11
May 11, 2011
Main Characteristics
 MOS1, 2, 3 (Nch)
100
10
1
110
100
20
8
12
16
4
04
6
8
210
10
1
0.1
0.01
0.001
0.0001
0
12
3
5
4
0.1
1000
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
0.1
0.01
110
100
10
1
Drain Current ID (A)
Static Drain to Source State On Resistance
vs. Drain Current
100
1000
VGS = 2.7 V
4.5 V
2.8 V
10 V
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
50
−50 −25 0 25 50 75 100 125 150 175
0
20
10
40
30
50
40
30
20
10
04
8
12
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Tc = 150
°C
25
°C
−40°C
VGS = 4.5 V
10 V
VDS = 10 V
Pulse Test
Tc = 150
°C
25
°C
−40°C
ID = 10 A
Pulse Test
ID = 10 A
Pulse Test
VSG = −4.5 V
−10 V
Tc = 25
°C
1 shot Pulse
DC Operation
PW = 10 ms
Operation
in this area
is limited R
DS(on)
Tc = 25
°C
Pulse Test
Tc = 25
°C
Pulse Test



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