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RJM0404JSC Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJM0404JSC Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 12 page  RJM0404JSC Preliminary R07DS0338EJ0500 Rev.5.00 Page 3 of 11 May 11, 2011 Electrical Characteristics MOS1, MOS2, MOS3 (N Channel) (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current IDSS — — 10 A VDS = 40 V, VGS = 0 Gate to source leak current IGSS — — 10 A VGS = +20 / –5 V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA — 17 21 m ID = 10 A, VGS = 10 V Note5 Static drain to source on state resistance RDS(on) — 24 34 m ID = 10 A, VGS = 4.5 V Note5 Input capacitance Ciss — 1400 — pF Output capacitance Coss — 230 — pF Reverse transfer capacitance Crss — 100 — pF VDS = 10V, VGS = 0, f = 1 MHz Total gate charge Qg — 23 — nC Gate to source charge Qgs — 3 — nC Gate to drain charge Qgd — 4 — nC VDD = 25 V, VGS = 10 V, ID = 20 A Turn-on delay time td(on) — 15 — ns Rise time tr — 35 — ns Turn-off delay time td(off) — 50 — ns Fall time tf — 8 — ns VGS = 10 V, ID = 10 A, VDD 20 V,RL = 2 , RG = 4.7 Body-drain diode forward voltage VDF — 0.92 1.2 V IF = 20 A, VGS = 0 Note5 Body-drain diode reverse recovery time trr — 20 — ns IF = 20 A, VGS = 0 diF/dt = 50 A/s Note: 5. Pulse test MOS4, MOS5, MOS6 (P Channel) (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage drain current IDSS — — –10 A VDS = –40 V, VGS = 0 Gate to source leak current IGSS — — 10 A VGS = –20 / +5 V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA — 34 42 m ID = –10 A, VGS = –10 V Note6 Static drain to source on state resistance RDS(on) — 48 68 m ID = –10 A, VGS = –4.5 V Note6 Input capacitance Ciss — 1500 — pF Output capacitance Coss — 230 — pF Reverse transfer capacitance Crss — 140 — pF VDS = –10 V, VGS = 0, f = 1 MHz Total gate charge Qg — 25 — nC Gate to source charge Qgs — 5 — nC Gate to drain charge Qgd — 4 — nC VDD = –25 V, VGS = –10 V, ID = –20 A Turn-on delay time td(on) — 30 — ns Rise time tr — 55 — ns Turn-off delay time td(off) — 50 — ns Fall time tf — 20 — ns VGS = –10 V, ID= –10 A, VDD –20 V, RL =2 , RG = 4.7 Body-drain diode forward voltage VDF — –0.97 –1.26 V IF = –20 A, VGS = 0 Note6 Body-drain diode reverse recovery time trr — 30 — ns IF = –20 A, VGS = 0 diF/dt = 50 A/s Note: 6. Pulse test |
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