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RJM0404JSC Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJM0404JSC
Description  Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
PDF  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJM0404JSC Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJM0404JSC
Preliminary
R07DS0338EJ0500 Rev.5.00
Page 2 of 11
May 11, 2011
Pin Arrangement
(Top View)
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
21
Common Header
22
Common Header
23
Common Header
1
2
3
4
5
6
7
8
9
10
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
No.
1
2
3
4
5
6
7
8
9
10
(Bottom View)
14
S
19
S
11
S
MOS5
Pch
MOS6
Pch
MOS4
Pch
MOS2
Nch
MOS1
Nch
MOS3
Nch
12
G
17
G
10
G
7
G
S
4
S
9
S
1
20
G
2
G
D 8,13,23
D 5,6,15,16,22
D 3,18,21
Absolute Maximum Ratings
(Ta = 25
C)
Value
Item
Symbol
MOS1, 2, 3 (Nch)
MOS4, 5, 6 (Pch)
Unit
Drain to source voltage
VDSS
40
–40
V
Gate to source voltage
VGSS
+20 / –5
–20 / +5
V
Drain current
ID
20
–20
A
Drain peak current
ID (pulse)
Note1
80
–80
A
Avalanche current
IAP
Note3
20
–20
A
Avalanche energy
EAR
Note3
53
53
mJ
Channel dissipation
Pch
Note2
54
54
W
Channel temperature
Tch
Note4
175
175
C
Storage temperature
Tstg
–55 to +150
–55 to +150
C
Notes: 1.
PW
 10s duty cycle  1%
2. Tc = 25
C : 1 Drive Operation.
3. Tch = 25
C, Rg  50 
4. AEC-Q101 compliant
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 2.78C/W



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