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RN49A6FS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN49A6FS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() RN49A6FS 2009-04-23 1 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 Q1 (R1: 47k Ω , R2: 47kΩ) Q2 (R1: 4.7k Ω, R2: 47kΩ) Equivalent Circuit (top view) Marking Unit: mm fS6 1.EMIITTER1 2.BASE1 3 COLLECTOR2. 4.EMIITTER2 5.BASE2 6.COLLECTOR1 0.1±0.05 6 0.8±0.05 1.0±0.05 1 2 0.1±0.05 3 5 4 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC ― JEITA ― TOSHIBA 2-1F1D Weight: 1 mg (typ.) R1 B C E R1 B C E 123 654 Type name X8 6 5 4 1 2 3 Q1 Q2 |
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