RN49A6FS datasheet(3/6 Pages) TOSHIBA

3 / 6 page

RN49A6FS

2009-04-23

Electrical Characteristics (Ta = 25°C) (Q1)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = 20 V, IE = 0

⎯

100

Collector cut-off current

ICEO

VCE = 20 V, IB = 0

⎯

500

Emitter cut-off current

IEBO

VEB = 10 V, IC = 0

0.088

⎯

0.133

DC current gain

hFE

VCE = 5 V, IC = 10 mA

120

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 5 mA, IB = 0.25 mA

⎯

0.15

Input voltage (ON)

VI (ON)

VCE = 0.2 V, IC = 5 mA

1.2

⎯

3.6

Input voltage (OFF)

VI (OFF)

VCE = 5 V, IC = 0.1 mA

0.8

⎯

1.5

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

1.2

⎯

Input resistor

―

37.6

56.4

kΩ

Resistor ratio

R1/R2

―

0.8

1.0

1.2

―

Electrical Characteristics (Ta =25°C) (Q2)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = −20 V, IE = 0

⎯

−100

Collector cut-off current

ICEO

VCE = −20 V, IB = 0

⎯

−500

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

−0.08

⎯

−0.121

DC current gain

hFE

VCE = −5 V, IC = −10 mA

120

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −5 mA, IB = −0.25 mA

⎯

−0.15

Input voltage (ON)

VI (ON)

VCE = −0.2 V, IC = −5 mA

−0.6

⎯

−1.2

Input voltage (OFF)

VI (OFF)

VCE = −5 V, IC = −0.1 mA

−0.4

⎯

−0.8

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

⎯

1.2

⎯

Input resistor

⎯

3.76

4.7

5.64

kΩ

Resistor ratio

R1/R2

⎯

0.08

0.1

0.12

―

RN49A6FS Datasheet(PDF) 3 Page - Toshiba Semiconductor

RN49A6FS Datasheet(HTML) 3 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL