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STRH100N10 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STRH100N10
Description  Rad-Hard 100 V, 48 A N-channel Power MOSFET
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STRH100N10 Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STRH100N10
6/17
Doc ID 17486 Rev 6
Table 7.
Switching times (pre-irradiation)
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 50 V, ID = 24 A,
RG = 4.7 Ω, VGS = 12 V
23
29
79
33
29.5
40
99
64
36
52
119
95
ns
ns
ns
ns
Table 8.
Source drain diode (pre-irradiation) (1)
1.
Refer to the
Figure 16.
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(2)
2.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
48
192
A
A
VSD
(3)
3.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 48 A, VGS = 0
1.5
V
trr
(4)
Qrr
(4)
IRRM
(4)
4.
Not tested in production, guaranteed by process.
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 48 A,
di/dt = 100 A/µs
VDD= 50 V, TJ = 25 °C
328
413
5
24
498
ns
µC
A
trr
(4)
Qrr
(4)
IRRM
(4)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 48 A,
di/dt = 100 A/µs
VDD= 50 V, TJ = 150 °C
400
500
7
28
600
ns
µC
A



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