STTH2003C-Y datasheet(3/7 Pages) STMICROELECTRONICS

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STTH2003C-Y

Characteristics

Doc ID 022396 Rev 1

3/7

Table 5.

Recovery characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A

IR = 1 A

IF = 1 A, VR = 30 V

dIF/dt = -50 A/µs

tfr

Forward recovery time

Tj = 25 °C

IF = 10 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

230

VFP

Peak forward voltage

Tj = 25 °C

IF = 10 A,

dIF/dt = 100 A/µs

3.5

IRM

Reverse recovery current

Tj = 125 °C

IF = 10 A, VCC = 200 V

dIF/dt = 200 A/µs

S factor Softness factor

0.3

Figure 1.

Conduction losses versus average

forward current (per diode)

Figure 2.

Forward voltage drop versus

forward current (maximum values,

per diode)

P1(W)

δ=tp/T

δ = 0.05

δ = 1

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

3.00

100

200

(A)

(V)

T =25°C

T =75°C

T =125°C

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (90% confidence, per

diode)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

t (s)

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =200V

T =125°C

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