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STTH2003C-Y Datasheet(PDF) 4 Page - STMicroelectronics

Part # STTH2003C-Y
Description  Automotive high efficiency ultrafast diode
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH2003C-Y Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH2003C-Y
4/7
Doc ID 022396 Rev 1
Figure 5.
Reverse recovery time versus dIF/dt
(90% confidence, per diode)
Figure 6.
Softness factor (tb/ta) versus dIF/dt
(typical values, per diode)
0
50
100
150
200
250
300
350
400
450
500
0
20
40
60
80
100
t (ns)
rr
dI /dt(A/µs)
F
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
V =200V
T =125°C
R
j
0
50
100
150
200
250
300
350
400
450
500
0.00
0.10
0.20
0.30
0.40
0.50
0.60
S factor
dI /dt(A/µs)
F
V =200V
T =125°C
R
j
Figure 7.
Relative variation of dynamic
parameters versus junction
temperature (reference: Tj = 125 °C)
Figure 8.
Forward recovery time versus dIF/dt
(90% confidence, per diode)
Figure 9.
Thermal resistance, junction to
ambient, versus copper surface
under tab
Figure 10.
Average forward current versus
ambient temperature
(
 = 0.5per diode)
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
T (°C)
j
S factor
IRM
0
50
100
150
200
250
300
350
400
450
500
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/µs)
F
I=I
T =125°C
F
F(AV)
j
V
=1.1 x V max.
FR
F
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
SCu(cm²)
R
(°C/W)
th(j-a)
Printed circuit board FR4,
copper thickness: 35 µm
0
1
2
3
4
5
6
7
8
9
10
11
12
0
25
50
75
100
125
150
175
I
(A)
F(AV)
T
(°C)
amb
R= R
th(j-a)
th(j-c)



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