CY8CMBR2016 datasheet(21/28 Pages) CYPRESS

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CY8CMBR2016

Document Number: 001-67921 Rev. *C

Page 21 of 28

Electrical Specifications

This section presents the DC and AC electrical specifications of the CY8CMBR2044 device.

Table 8. Absolute Maximum Ratings

Parameter

Description

Min

Typ

Max

Unit

Notes

TSTG

Storage temperature

–55

+125

°C

Higher storage temperatures reduce data

retention time. Recommended storage

temperature is +25 °C ± 25 °C. Extended

duration storage temperatures above 85 °C

degrade reliability.

VDD

Supply voltage relative to VSS

–0.5

–

+6.0

–

VIO

DC voltage on CapSense inputs

and digital output pins

VSS – 0.5

–

VDD + 0.5

–

IMIG

Maximum current into any GPO

output pin

–25

–

+50

–

ESD

Electrostatic discharge voltage

2000

–

Human body model ESD

Latch up current

–

200

In accordance with JESD78 standard

Table 9. Operating Temperature

Parameter

Description

Min

Typ

Max

Unit

Notes

Ambient temperature

–40

–

+85

°C

–

Commercial temperature

–

+70

°C

–

Operational die temperature

–40

–

+100

°C

–

DC Electrical Characteristics

The following table lists guaranteed maximum and minimum specifications for the entire voltage and temperature ranges.

Table 10. DC Chip Level Specifications

Parameter

Description

Min

Typ

Max

Unit

Notes

VDD[4, 5, 6]

Supply voltage

1.71

–

5.5

–

IDD

Supply current

–

3.3

4.0

Conditions are VDD = 3.0 V, TA = 25 °C

IDA

Active current

–

3.3

4.0

Conditions are VDD = 3.0 V, TA = 25 °C,

continuous sensor scan

IDS

Deep sleep current

–

0.1

0.5

A

Conditions are VDD = 3.0 V, TA = 25 °C

IAV1

Average current

–

0.25

–

Conditions are VDD = 3.0 V, TA = 25 °C and

16 buttons used, with 0% touch time, CP of

all sensors < 19 pFand scan rate = 250 ms

IAV2

Average current

–

2.13

–

Conditions are VDD = 3.0 V, TA = 25 °C and

16 buttons used, with 50% touch time, CP of

all sensors < 19 pFand scan rate = 250 ms,

Key Scan mode enabled

IAV3

Average current

–

0.42

–

Conditions are VDD = 3.0 V, TA = 25 °C and

16 buttons used, with 0% touch time, CP of

all sensors >19 pF and < 40 pF and scan

rate = 250 ms

IAV4

Average current

–

2.2

–

Conditions are VDD = 3.0 V, TA = 25 °C and

16 buttons used, with 50% touch time, CP of

all sensors >19 pF and < 40 pF and scan

rate = 250 ms, Key Scan mode enabled

Notes

4. When VDD remains in the range from 1.75 V to 1.9 V for more than 50 µs, the slew rate when moving from the 1.75 V to 1.9 V range to greater than 2 V must be

slower than 1 V/500 µs. This helps to avoid triggering POR. The only other restriction on slew rates for any other voltage range or transition is the SRPOWER_UP

parameter.

5. After power down, ensure that VDD falls below 100 mV before powering backup.

6. For proper CapSense block functionality, if the drop in VDD exceeds 5% of the base VDD, the rate at which VDD drops should not exceed 200 mV/s. Base VDD can

be between 1.8 V and 5.5 V

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