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STD44N4LF6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD44N4LF6 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STD44N4LF6 Electrical ratings Doc ID 17171 Rev 4 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 44 A ID Drain current (continuous) at TC = 100 °C 31 A IDM (1) 1. Pulse is rated according SOA Drain current (pulsed) 176 A PTOT Total dissipation at TC = 25 °C 50 W Derating factor 0.33 W/°C Tstg Storage temperature - 55 to 175 °C Tj Operating junction temperature Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 3 °C/W Rthj-pcb Thermal resistance junction-pcb max (1) 1. When mounted on 1 inch2, 2 oz Cu. 50 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current 20 A EAS (1) 1. Starting Tj = 25 °C, ID = IAV, VDD = 24 V Single pulse avalanche energy 150 mJ |
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