STD44N4LF6 datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STD44N4LF6

4/15

Doc ID 17171 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage VGS= 0

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20 V

VDS = 20 V,Tc = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on

resistance

VGS = 5 V, ID = 20 A

VGS = 10 V, ID = 20 A

11.3

8.9

12.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0 V

1190

200

110

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 20 V, ID = 40 A

VGS = 10 V

(see Figure 14)

4.3

Intrinsic gate resistance

f = 1 MHz open drain

3.1

Ω

Table 7.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 20 V, ID = 20 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

8.5

td(off)

Turn-off delay time

Fall time

STD44N4LF6 Datasheet(PDF) 4 Page - STMicroelectronics

STD44N4LF6 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL