STTH200W03TV1 datasheet(3/10 Pages) STMICROELECTRONICS

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STTH200W03TV1

Characteristics

Doc ID 023614 Rev 1

3/9

Table 5.

Dynamic characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IRM

Reverse recovery current

Tj = 125 °C

IF = 100 A, VR = 200 V

dIF/dt = -200 A/µs

-9

QRR

Reverse recovery charge

400

Sfactor

Softness factor

0.3

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V

dIF/dt = -100 A/µs

-40

tfr

Forward recovery time

Tj = 25 °C

IF = 100 A, VFR = 1.5 V

dIF/dt = 100 A/µs

2400

VFP

Forward recovery voltage

Tj = 25 °C

-2

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

PF(AV)(W)

100

120

140

160

180

100

120

140

δ=tp/T

IF(AV)(A)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

IFM(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

Tj=150°C

(Maximum values)

Tj=150 °C

(Typical values)

VFM(V)

Tj=25 °C

(Maximum values)

Figure 3.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values, per

diode)

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

tp(s)

RM(A)

100

150

200

250

300

350

400

450

500

dIF/dt(A/µs)

IF=IF(AV)

VR=200 V

Tj=125 °C

dIF/dt(A/µs)

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