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STP26NM60N Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP26NM60N
Description  N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP26NM60N Datasheet(HTML) 3 Page - STMicroelectronics

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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Electrical ratings
Doc ID 15642 Rev 5
3/23
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK, I²PAK,
TO-220, TO-247
TO-220FP
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
20
20(1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC = 100 °C
12.6
12.6 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
80
80(1)
A
PTOT
Total dissipation at TC = 25 °C
140
35
W
Derating factor
1.12
0.28
W/°C
dv/dt (3)
3.
ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
Tstg
Storage temperature
–55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-247 TO-220
I²PAK D²PAK TO-220FP
Rthj-case
Thermal resistance junction-
case max
0.89
3.6
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
50
62.5
62.5
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Thermal resistance junction-pcb
max
30
°C/W



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