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STL7NM60N Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL7NM60N
Description  Low input capacitance and gate charge, Low gate input resistance
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL7NM60N Datasheet(HTML) 3 Page - STMicroelectronics

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STL7NM60N
Electrical ratings
Doc ID 18348 Rev 2
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
V
VGS
Gate-source voltage
± 25
V
ID
(1)
1.
The value is rated according Rthj-case.
Drain current (continuous) at TC = 25 °C
5.8
A
ID
(1)
Drain current (continuous) at TC=100 °C
3.7
A
ID
(2)
2.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Drain current (continuous) at Tamb = 25 °C
1.4
A
ID
(2)
Drain current (continuous) at Tamb =100 °C
0.9
A
IDM
(2)(3)
Drain current (pulsed)
5.6
A
PTOT
(2)
Total dissipation at Tamb = 25 °C
4
W
PTOT
(1)
Total dissipation at TC = 25 °C
68
W
IAS
Avalanche current, repetitive or not-repetitive (3)
3.
Pulse width limited by Tjmax
2A
EAS
Single pulse avalanche energy (4)
4.
Starting Tj = 25 °C, ID= IAS, VDD = 50 V
119
mJ
dv/dt (5)
5.
ISD ≤ 5.8 A, dv/dt ≤ 400 A/µs,VDS peak ≤V(BR)DSS, VDD= 80% V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
TJ
Tstg
Operating junction temperature
storage temperature
-55 to 150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
1.85
°C/W
Rthj-amb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Thermal resistance junction-amb max.
31.3
°C/W



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