STL7NM60N datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STL7NM60N

4/13

Doc ID 18348 Rev 2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 600 V,

VDS = 600 V, Tc = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 25 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 2.5 A

0.805

0.90

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50V, f=1 MHz,

VGS=0

363

24.6

1.1

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Output equivalent

capacitance

VGS =0, VDS =0 to 480 V

130

Gate input resistance

f=1 MHz gate DC bias=0

test signal level = 20 mV

open drain

-5.4

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 480 V, ID = 5 A

VGS =10 V

(see Figure 15)

2.7

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 300 V, ID = 2.5 A,

RG= 4.7 Ω, VGS = 10 V

(see Figure 14)

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