PIC16CE623 datasheet(87/114 Pages) MICROCHIP

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 1998-2013 Microchip Technology Inc.

DS40182D-page 87

PIC16CE62X

13.2

DC CHARACTERISTICS:

PIC16LCE62X-04 (Commercial, Industrial)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

–40

C  TA  +85C for industrial and

C  TA  +70C for commercial and

–40

C  TA  +125C for extended

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

D001

VDD

Supply Voltage

2.5

–

5.5

See Figure 13-1 through Figure 13-3

D002

VDR

RAM Data Retention

Voltage (Note 1)

–

1.5*

–

Device in SLEEP mode

D003

VPOR

VDD start voltage to

ensure Power-on Reset

–VSS

–

See section on power-on reset for details

D004

SVDD

VDD rise rate to ensure

Power-on Reset

.05*

–

V/ms

See section on power-on reset for details

D005

VBOR

Brown-out Detect Voltage

3.7

4.0

4.35

BOREN configuration bit is cleared

D010

IDD

Supply Current (Note 2)

–

1.2

–

2.0

1.1

A

FOSC = 4 MHz, VDD = 5.5V, WDT disabled,

XT osc mode, (Note 4)*

FOSC = 4 MHz, VDD = 2.5V, WDT disabled,

XT osc mode, (Note 4)

FOSC = 32 kHz, VDD = 2.5V, WDT disabled,

LP osc mode

D020

IPD

Power Down Current (Note 3)

–

2.0

2.2

9.0

A

VDD = 2.5V

VDD = 3.0V*

VDD = 5.5V

VDD = 5.5V Extended

D022

D022A

D023

D023A

IWDT

IBOR

ICOMP

IVREF

WDT Current (Note 5)

Brown-out Reset Current

(Note 5)

Comparator Current for each

Comparator (Note 5)

VREF Current (Note 5)

–

6.0

125

135

A

VDD=4.0V

(125

C)

BOD enabled, VDD = 5.0V

VDD = 4.0V

IEE Write

IEE Read

IEE

Operating Current

Standby Current

–

100

A

VCC = 5.5V, SCL = 400 kHz

VCC = 3.0V, EE VDD = VCC

FOSC

LP Oscillator Operating Frequency

RC Oscillator Operating Frequency

XT Oscillator Operating Frequency

HS Oscillator Operating Frequency

—

200

kHz

MHz

All temperatures

These parameters are characterized but not tested.

†

Data in "Typ" column is at 5.0V, 25

C, unless otherwise stated. These parameters are for design guidance only and are not

tested.

Note 1:

This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as specified.

3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the

part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.

4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the for-

mula Ir = VDD/2Rext (mA) with Rext in k

.

5: The

 current is the additional current consumed when this peripheral is enabled. This current should be added to the base

IDD or IPD measurement.

6: Commercial temperature range only.

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