PMEG6002EB_PMEG6002TV_1

© NXP B.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 24 November 2006

3 of 10

NXP Semiconductors

PMEG6002EB; PMEG6002TV

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

reverse voltage

-

60

V

forward current

-

0.2

A

repetitive peak forward current

δ≤ 0.25

-2

A

non-repetitive peak forward

current

square wave;

[1] -

2.5

A

total power dissipation

PMEG6002EB

[1] -

300

mW

PMEG6002TV

[1] -

200

mW

[2] -

300

mW

Per device

total power dissipation

PMEG6002TV

[1] -

300

mW

[2] -

400

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C